N TYPE GE SECRETS

≤ 0.fifteen) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled by way of oxidizing and annealing levels. Mainly because of the preferential oxidation of Si about Ge [68], the initial Si1–on is summoned by The mix from the gate voltage and gate capacitance, thus a